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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">vestich</journal-id><journal-title-group><journal-title xml:lang="ru">Известия Национальной академии наук Беларуси. Серия химических наук</journal-title><trans-title-group xml:lang="en"><trans-title>Proceedings of the National Academy of Sciences of Belarus, Chemical Series</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1561-8331</issn><issn pub-type="epub">2524-2342</issn><publisher><publisher-name>The Republican Unitary Enterprise Publishing House "Belaruskaya Navuka"</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.29235/1561-8331-2018-54-2-146-153</article-id><article-id custom-type="elpub" pub-id-type="custom">vestich-315</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ФИЗИЧЕСКАЯ ХИМИЯ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>PHYSICAL CHEMISTRY</subject></subj-group></article-categories><title-group><article-title>ПОЛУПРОВОДНИКОВЫЕ ДАТЧИКИ ДИОКСИДА АЗОТА  НА ОСНОВЕ КОМПОЗИЦИИ In2O3–Ga2O3–WO3</article-title><trans-title-group xml:lang="en"><trans-title>NITROGEN DIOXIDE SEMICONDUCTOR SENSORS BASED  ON In2O3–Ga2O3–WO3 COMPOSITION</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Гайдук</surname><given-names>Ю. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Haiduk</surname><given-names>Yu. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Гайдук Юлиан Станиславович – аспирант кафедры физической химии.</p><p>ул. Ленинградская, 14, 220030, Минск.</p></bio><bio xml:lang="en"><p>Yulian S. Haiduk – Postgraduate student.</p><p>14, Leningradskaya Str., 220030, Minsk.</p></bio><email xlink:type="simple">j_hajduk@bk.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Савицкий</surname><given-names>А. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Savitsky</surname><given-names>A. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Cавицкий Александр Александрович – канд. хим. наук, доцент кафедры физической химии.</p><p>ул. Ленинградская, 14, 220030, Минск.</p></bio><bio xml:lang="en"><p>Alexander A. Savitsky – Ph. D. (Chemistry), Associate Professor.</p><p>14, Leningradskaya Str., 220030, Minsk.</p></bio><email xlink:type="simple">aasavitsky@yandex.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Ломоносов</surname><given-names>В. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Lomonosov</surname><given-names>V. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Ломоносов Владимир Александрович – канд. хим. наук, зав. лаб. химии конденсированного состояния.</p><p>ул. Ленинградская, 14, 220030, Минск.</p><p> </p></bio><bio xml:lang="en"><p>Vladimir A. Lomonosov – Ph. D. (Chemistry), Head  of the Laboratory.</p><p>14, Leningradskaya Str., 220030, Minsk.</p></bio><email xlink:type="simple">lva_minsk@tut.by</email><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Белорусский государственный университет.</institution></aff><aff xml:lang="en"><institution>Belarusian State University.</institution></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Научно-практический центр Национальной академии наук Беларуси по материаловедению.</institution></aff><aff xml:lang="en"><institution>Belarusian State University.</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2018</year></pub-date><pub-date pub-type="epub"><day>21</day><month>06</month><year>2018</year></pub-date><volume>54</volume><issue>2</issue><fpage>146</fpage><lpage>153</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Гайдук Ю.С., Савицкий А.А., Ломоносов В.А., 2018</copyright-statement><copyright-year>2018</copyright-year><copyright-holder xml:lang="ru">Гайдук Ю.С., Савицкий А.А., Ломоносов В.А.</copyright-holder><copyright-holder xml:lang="en">Haiduk Y.S., Savitsky A.A., Lomonosov V.A.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://vestichem.belnauka.by/jour/article/view/315">https://vestichem.belnauka.by/jour/article/view/315</self-uri><abstract><p>Изучены газочувствительные свойства оксидной композиции In2O3–Ga2O3–WO3, приготовленной золь-гель методом, с содержанием оксидов вольфрама 5 и галлия 4 мас.%. Установлено, что добавление оксида вольфрама приводит к существенному возрастанию чувствительности композиции In2O3–Ga2O3 (4 мас. %) к диоксиду азота. Методами рентгенофазового анализа и спектроскопии комбинационного рассеяния изучены структурные особенности исследованной композиции. Установлено, что совместная термическая обработка золей In2O3, Ga2O3, WO3 приводит к формированию гетерогенного двухфазного материала, содержащего фазы твердого раствора (In, Ga)2O3 и моноклинного WO3. По данным РФА, рост размера зерен WO3 и In2O3 при термической обработке в смешанной композиции In2O3–WO3 замедляется по сравнению с индивидуальными оксидами. Предполагается, что существенное увеличение чувствительности к низким концентрациям диоксида азота композиции, содержащей добавку WO3, может быть связано с наличием многозарядных адсорбционных центров (W4+, W5+, W6+), а также с усложнением (по данным ЭПР) дефектной структуры двойной In2O3–WO3 и тройной In2O3–Ga2O3–WO3 композиции по сравнению с исходными оксидами. Изготовлены одноэлектродные полупроводниковые датчики диоксида азота с низким порогом детектирования (&lt;&lt; 1 ppm) и низким энергопотреблением. Сенсорный отклик газовых датчиков на основе композиции In2O3–Ga2O3 (4 мас. %) – WO3 (5 мас. %) к газовым смесям, содержащим 10 ppm NO2 в воздухе, имеет выраженный максимум при мощностях 80–90 мВт.</p></abstract><trans-abstract xml:lang="en"><p>The properties of oxide gas sensitive compositions In2O3–Ga2O3–WO3 prepared by sol-gel method, with tungsten oxide 5 % wt., gallium oxide 4 % wt., have been investigated. Tungsten oxide addition was established to lead to significant increase in nitrogen dioxide sensitivity. The composition structural features were studied by X-ray diffraction analysis and Raman spectroscopy. It was found that thermal treatment of mixed sols In2O3, Ga2O3, WO3 leads to the formation of hete- rogeneous two-phase material containing (In, Ga)2O3 solid solution and monoclinic WO3 phases. According to X-ray diffraction data, the growth in size of WO3 and In2O3 grains during heat treatment in the mixed In2O3–WO3 composition decelerates  as compared to individual oxides. It is assumed that significant increase in the sensitivity to low concentrations of nitrogen dioxide of the composition containing WO3 additive, as compared to the initial one, may be due to the presence of multiply charged adsorption centers (W4+, W5+, W6+), as well as due to the complication (according to EPR) of the defect structure  of the double In2O3–WO3 and a triple In2O3–Ga2O3–WO3 composition as compared to the initial oxides. Single-electrode semiconductor nitrogen dioxide sensors with a low threshold of detection (&lt;&lt; 1 ppm) and low power consumption are fabrica- ted. The response of gas sensors based on the In2O3–Ga2O3 (4 % wt.)–WO3 (5 % wt.) composition to gas mixtures containing 10 ppm of NO2 in air has a pronounced maximum at powers of 80–90 mW.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>газовый сенсор</kwd><kwd>золь-гель метод</kwd><kwd>вольфрама оксид</kwd><kwd>индия оксид</kwd><kwd>оксиды азота</kwd></kwd-group><kwd-group xml:lang="en"><kwd>gas sensor</kwd><kwd>a sol-gel method</kwd><kwd>tungsten oxide</kwd><kwd>indium oxide</kwd><kwd>nitrogen oxides</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Korotchenkov, G. Practical aspects in design of one-electrode semiconductorgas sensors: Status report / G. Korotchenkov // Sens. and Actuators B. Сhem. – 2007. – Vol. 121, N. 2. – P. 664–678. DOI: 10.1016/j.snb.2006.04.092</mixed-citation><mixed-citation xml:lang="en">Korotchenkov G. 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