Vacuum thermally deposited films of 1H-indole-3N-(phenyl)-aldonitrone as a dry-exposable material for laser microlithography

Abstract

It was experimentally showed that high quality high-gloss films of amorphous type are formed at vacuum deposition of 1H-indole-3N-(phenyl)-aldonitrone. At laser exposure (λ = 351 nm) of films latent image of the mask is formed, which is manifested by vacuum radiation of quartz halogen lamp. The films with the thickness of 1,3±0,2 μm mask phosphorus and boron ions with the energy up to 1 000 eV (at implantation dozes 0,10-0,12 μK1/cm²) in silicon technology of obtaining of BIS.